MY108408A - Method of depositing conductors in high aspect ratio apertures - Google Patents

Method of depositing conductors in high aspect ratio apertures

Info

Publication number
MY108408A
MY108408A MYPI92000456A MYPI19920456A MY108408A MY 108408 A MY108408 A MY 108408A MY PI92000456 A MYPI92000456 A MY PI92000456A MY PI19920456 A MYPI19920456 A MY PI19920456A MY 108408 A MY108408 A MY 108408A
Authority
MY
Malaysia
Prior art keywords
aspect ratio
high aspect
apertures
ratio apertures
depositing conductors
Prior art date
Application number
MYPI92000456A
Other languages
English (en)
Inventor
Leddy Mcdevitt Thomas
Paul Lee Pei-Ing
John Licata Thomas
Christian Parries Paul
Lewis Pennington Scott
Gardner Ryan James
Craig Strippe David
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of MY108408A publication Critical patent/MY108408A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4076—Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
MYPI92000456A 1991-04-19 1992-03-19 Method of depositing conductors in high aspect ratio apertures MY108408A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69017191A 1991-04-19 1991-04-19

Publications (1)

Publication Number Publication Date
MY108408A true MY108408A (en) 1996-09-30

Family

ID=24771386

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI92000456A MY108408A (en) 1991-04-19 1992-03-19 Method of depositing conductors in high aspect ratio apertures

Country Status (10)

Country Link
US (1) US5401675A (en])
EP (1) EP0509305A1 (en])
JP (1) JP2726595B2 (en])
KR (1) KR960011927B1 (en])
CN (1) CN1033175C (en])
BR (1) BR9201351A (en])
CA (1) CA2061119C (en])
MY (1) MY108408A (en])
SG (1) SG42979A1 (en])
TW (1) TW207029B (en])

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TW271490B (en]) * 1993-05-05 1996-03-01 Varian Associates
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DE4325051C1 (de) * 1993-07-26 1994-07-07 Siemens Ag Anordnung zur Abscheidung einer Schicht auf einer Substratscheibe durch Kathodenstrahlzerstäuben und Verfahren zu deren Betrieb
JP2699839B2 (ja) * 1993-12-03 1998-01-19 日本電気株式会社 半導体装置の製造方法
US5711858A (en) * 1994-04-12 1998-01-27 International Business Machines Corporation Process for depositing a conductive thin film upon an integrated circuit substrate
US5633189A (en) * 1994-08-01 1997-05-27 Actel Corporation Method of making metal to metal antifuse
KR960042974A (en]) * 1995-05-23 1996-12-21
TW298674B (en]) * 1995-07-07 1997-02-21 At & T Corp
JPH0936228A (ja) * 1995-07-21 1997-02-07 Sony Corp 配線形成方法
US5700716A (en) 1996-02-23 1997-12-23 Micron Technology, Inc. Method for forming low contact resistance contacts, vias, and plugs with diffusion barriers
US5895266A (en) * 1996-02-26 1999-04-20 Applied Materials, Inc. Titanium nitride barrier layers
DE19621855C2 (de) 1996-05-31 2003-03-27 Univ Dresden Tech Verfahren zur Herstellung von Metallisierungen auf Halbleiterkörpern unter Verwendung eines gepulsten Vakuumbogenverdampfers
US5956612A (en) * 1996-08-09 1999-09-21 Micron Technology, Inc. Trench/hole fill processes for semiconductor fabrication
US6025269A (en) * 1996-10-15 2000-02-15 Micron Technology, Inc. Method for depositioning a substantially void-free aluminum film over a refractory metal nitride layer
US6045634A (en) * 1997-08-14 2000-04-04 Praxair S. T. Technology, Inc. High purity titanium sputtering target and method of making
TW430900B (en) * 1997-09-08 2001-04-21 Siemens Ag Method for producing structures having a high aspect ratio
US6287436B1 (en) 1998-02-27 2001-09-11 Innovent, Inc. Brazed honeycomb collimator
US6362097B1 (en) * 1998-07-14 2002-03-26 Applied Komatsu Technlology, Inc. Collimated sputtering of semiconductor and other films
US6140217A (en) * 1998-07-16 2000-10-31 International Business Machines Corporation Technique for extending the limits of photolithography
US6197684B1 (en) * 1999-03-19 2001-03-06 United Microelectronics Corp. Method for forming metal/metal nitride layer
US6342133B2 (en) 2000-03-14 2002-01-29 Novellus Systems, Inc. PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
DE50207784D1 (de) * 2002-03-19 2006-09-21 Scheuten Glasgroep Bv Vorrichtung und Verfahren zum gerichteten Aufbringen von Depositionsmaterial auf ein Substrat
KR100528069B1 (ko) * 2003-09-02 2005-11-15 동부아남반도체 주식회사 반도체 소자 및 그 제조 방법
KR100561523B1 (ko) * 2003-12-31 2006-03-16 동부아남반도체 주식회사 알루미늄 배선 형성 방법
KR100628242B1 (ko) * 2004-06-24 2006-09-26 동부일렉트로닉스 주식회사 반도체 소자의 베리어층 형성 방법
KR100602087B1 (ko) * 2004-07-09 2006-07-14 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
KR100552857B1 (ko) * 2004-10-25 2006-02-22 동부아남반도체 주식회사 반도체 소자의 콘택 형성 방법
US8236691B2 (en) * 2008-12-31 2012-08-07 Micron Technology, Inc. Method of high aspect ratio plug fill
JP6088083B1 (ja) * 2016-03-14 2017-03-01 株式会社東芝 処理装置及びコリメータ
USD858468S1 (en) * 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD859333S1 (en) * 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber

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DE2705225C2 (de) * 1976-06-07 1983-03-24 Nobuo Tokyo Nishida Ornamentteil für Uhren usw.
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FR2583220B1 (fr) * 1985-06-11 1987-08-07 Thomson Csf Procede de realisation d'au moins deux metallisations d'un composant semi-conducteur, recouvertes d'une couche de dielectrique et composant obtenu par ce dielectrique
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JPH0660391B2 (ja) * 1987-06-11 1994-08-10 日電アネルバ株式会社 スパッタリング装置
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US5112693A (en) * 1988-10-03 1992-05-12 Ppg Industries, Inc. Low reflectance, highly saturated colored coating for monolithic glazing
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JP2768364B2 (ja) * 1989-03-16 1998-06-25 富士通株式会社 半導体装置の製造方法
US4920073A (en) * 1989-05-11 1990-04-24 Texas Instruments, Incorporated Selective silicidation process using a titanium nitride protective layer
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US5008217A (en) * 1990-06-08 1991-04-16 At&T Bell Laboratories Process for fabricating integrated circuits having shallow junctions

Also Published As

Publication number Publication date
JPH05299375A (ja) 1993-11-12
TW207029B (en]) 1993-06-01
CA2061119C (en) 1998-02-03
CN1033175C (zh) 1996-10-30
JP2726595B2 (ja) 1998-03-11
BR9201351A (pt) 1992-12-01
KR960011927B1 (ko) 1996-09-04
CA2061119A1 (en) 1992-10-20
US5401675A (en) 1995-03-28
EP0509305A1 (en) 1992-10-21
KR920020613A (ko) 1992-11-21
CN1065888A (zh) 1992-11-04
SG42979A1 (en) 1997-10-17

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